International Scientific Journals
of Scientific Technical Union of Mechanical Engineering "Industry 4.0"

This paper presents an investigation of innovative nanostructured semiconductive materials, focusing on dichalcogenides of transition metals, particularly WS2. The properties of WS2 in the context of its application in sensor technology and highlight the anticipated advantages of nanostructured disulfides compared to bulk semiconductor materials are discussed in the introduction. We propose a model sensor element based on the nanostructured disulfide WS2 and introduce a technological method utilizing electron beam lithography (EBL) for its preparation. The paper details the processes involved in preparing the resist masking layer using EBL, the metallization of the interdigital electrode (IDE) with contacts and important EBL characteristics such as a contrast curve, dependence of the linewidth on the exposure dose, and the line edge roughness.

In this work, electron beam lithography (EBL) is presented as an important technology shaping the future of semiconductor manufacturing within the Industry 4.0 initiative. The EBL contribution to the ongoing evolution of electronic devices and technologies is discussed in the context of the Industry 4.0 initiative. Semiconductor technologies are foundational to the implementation of Industry 4.0, playing a critical role in enabling advanced computing, communication, sensing, and control systems. They facilitate the creation of intelligent, interconnected, and automated systems in the Industry 4.0 initiative. In addition, we present some of our results in the field of EBL research. The focus is on investigating the electron beam resist profile depending on various process parameters. The influence of electron beam lithography parameters, such as electron energy, resist thickness, and exposure dose, on the resist sidewall shape (profile) is studied for the PMMA (polymethyl-methacrylate) positive electron beam resist. Simulation results based on measurements along the resist profile depth are presented and discussed. The aim of this work is to develop and validate models for predicting and precisely controlling resist profiles in thick PMMA layers applied in the fabrication of electronic devices.

This work presents experimental and theoretical investigation of exposed and developed negative electron resist AR-N 7520 profiles using electron beam lithography system ZBA23 (Raith) at variation of the exposure doses and pre-defined exposure pattern. Several overall geometry quality criteria for the shape of the developed resist profile cross-sections are defined. Empirical models are estimated for the dependence of overall geometry characteristics of the obtained resist profiles on the exposure dose. These overall quality characteristics are used for defining of technological requirements for the formed profiles and for obtaining optimal regimes by multicriterial optimization.