International Scientific Journals
of Scientific Technical Union of Mechanical Engineering "Industry 4.0"

Plasma basic ion implantation (PBII) with high negative voltage pulses has been applied to test specimens in a sterilization process as a technique suitable for three-dimensional workpieces. Pulsed high negative voltage was applied to the electrode in this process at the gas pressure of oxygen. It was reported that the PBII process reduced the numbers of active Bacillus pumilus cells using self-ignited plasma N₂ gas generated by only pulsed voltages. The number of bacteria survivors was reduced by 10^-5with a few min exposure. As the ion energy is the most important processing parameter, a simple method to estimate the oxygen ion energy calculated using distribution for oxygen in Si implanted by PBII was estimated. In this work, the Effect of Plasma Density on Residual Bacterial Number and Applied Voltage is studied.

TiAl6V (ELI) has the low density, low elastic modulus and high strength. Biocompatibility of this material allows one to adapt it to human implant production and successfully use in the manufacture of surgical implants. Spherical argon-atomized Ti6Al4V (ELI) (45µm) powder from TLS Technik was used for study. The chemical composition complies with the ASTM F-136 (grade 5), ASTM B348 (grade 23) standard for surgical implant applications. Two machines from two scientific centers (Russia and South Africa) were used for the manufacturing of the alloys. Analysis of the oxygen and nitrogen contamination in SLM alloys was done with Van de Graaff accelerator with 2 Mega Volts. It is found that the oxygen concentration in both samples is about 0.2 wt. % and decreases with the increasing of the sample depth; the nitrogen concentration is about 0,02 wt%. X-Ray results show an absence of beta (BCC) phase in both samples. TEM studies found the metastable martensitic structure and silicon nitride Si3N4.