Abstract

Ferroelectric thin films are widely used in devices of micro- and nanoelectronics. In particular, their unique properties (high values of relative permittivity, hysteresis loop, close to rectangular) are connected with the presence of a phase transition leading to a change of the functional dependencies form between the material parameters at temperatures below and above the phase transition temperature. Depending on the purposes of materials research consisting in the analysis of their properties or the materials synthesis with specified characteristics, two tasks can be solved: materials analysis ; controlled synthesis of a material with specified properties.The authors considered the generalized structure of the study process of ferroelectric materials; the interconnection of the parameters of active dielectrics was analyzed. It made it possible to optimize the process of studying the materials used in elements of functional electronics.