Abstract

We represent the results of numerical computations of the frequency and temperature domains of possible realization of internal optical bistability in flat quasi-two-dimensional semiconductor nanoheterostructures with a single quantum well (i.e., nanofilms). Particular computations have been made for a nanofilm of layered semiconductor PbI2 embedded in dielectric medium, i.e. ethylene-methacrylic acid (E-MAA) copolymer. It has been shown that increasing thickness of a nanofilm results in the long-wavelength shift of the frequency interval of realization of bistability, increasing size of the hysteresis loop, and broadening temperature interval of realization of this phenomenon.