International Scientific Journals
of Scientific Technical Union of Mechanical Engineering "Industry 4.0"

We represent the results of numerical computations of the frequency and temperature domains of possible realization of internal optical bistability in flat quasi-two-dimensional semiconductor nanoheterostructures with a single quantum well (i.e., nanofilms). Particular computations have been made for a nanofilm of layered semiconductor PbI2 embedded in dielectric medium, i.e. ethylene-methacrylic acid (E-MAA) copolymer. It has been shown that increasing thickness of a nanofilm results in the long-wavelength shift of the frequency interval of realization of bistability, increasing size of the hysteresis loop, and broadening temperature interval of realization of this phenomenon.