Machines. Technologies. Materials.
Vol. 19 (2025), Issue 2, pg(s) 69-70

MATERIALS

Investigation of Bi2Te3 single crystal doped with Se obtained using Bridgman method

  • 1 Technical Faculty Bor, University of Belgrade, V.J. 12, 19210 Bor, Serbia
  • 2 Mining and Metallurgy Institute Bor, Alberta Ajnštajna 1, 19210 Bor, Serbia

Abstract

Researches in this paper included characterization of bismuth telluride single crystal doped with selenium. In order to study the effect of Se doping on the thermoelectric properties of Bi2Te2.7Se0.3 single crystal, an ingot was prepared by Bridgman method. The Bi2Te2.7Se0.3 single crystal in 11 mm × 80 mm size was grown.
The obtained empirical formula does not deviate from the given compound formula. Bulk sample was characterized by Seebeck coefficient (S) as а function of temperature in the range of 40 – 320°C by а homemade impedance meter.

References

  1. Saša Marjanović, Emina Požega, Dragoslav Gusković, Danijela Simonović, Zdenka Stanojević Šimšić, Slavica Miletić, Milijana Mitrović, Synthesis and investigation of BiTeSe single crystal doped with As obtained using Bridgman method, International Scientific Conference Machines. Technologies. Materials, 11-14.03.2020, BOROVETS, BULGARIA, str. 106- 108. (ISSN: 2535-003X (ONLINE))
  2. Goldsmid, J., Thermoelectric Refrigeration (Plenum, New York, 1964).
  3. Tritt, T. M. Ed. Semiconductors and Semimetals, Recent Trends in Thermoelectric Materials Research: Part One to Three (Academic, San Diego, CA, 2001), vol. 69 to 71.
  4. Rowe, M., Ed. CRC Handbook of Thermoelectrics (CRC, Boca Raton, FL, 1995).
  5. Atuchin, V. V., Gavrilova, T. A., Kokh, K. A., Kuratieva, N. V., Pervukhina, N. V., Surovtsev, N. V. Structural and vibrational properties of PVT grown Bi2Te3 microcrystals. Solid State Communications, 152 (2012), 1119-1122.
  6. Berger, L. Semiconductor materials. CRC Press, NW, USA, 1997
  7. Bhakti, J., Dimple, S., Ravindra, N. M. Transport Property Measurements in Doped Bi2Te3 Single Crystals Obtained via Zone Melting Method. Journal of electronic materials, 44 (6) (2015), 1509-1516.
  8. Bulat, L. P., Drabkin, I. A., Karatayev, V. V., Osvenskii, V. B., Parkhomenko, Y. N., Lavrentev, M. G., Sorokin, A. I., Pshenai- Severin, D. A., Blank, V. D., Pivovarov, G. I. Structure and transport properties of bulk nanothermoelectrics based on BixSb2−xTe3 fabricated by SPS method. Journal of Electronic Materials, 42 (2013), 2110-2113.
  9. Chen, J., Zhou, X., Uher, C., Shi, X., Jun, J., Dong, H., Li, Y., Zhou, Y., Wen, Z., Chen, L. Structural modifications and non-monotonic carrier concentration in Bi2Se0.3Te2.7 by reversible electrochemical lithium reactions. Acta Materialia, 61 (2013) 1508-1517.
  10. Chitroub, M., Scherrer, S., Scherrer, H. Anisotropy of the selenium diffusion coefficient in bismuth telluride, Journal of Physics and Chemistry of Solids, 61 (2000) 1693-1701.
  11. Cope, R. G., Penn, A.W. The powder metallurgy of n-type Bi2Te2.55Se0.45 thermoelectric material. Journal of Materials Science, 3 (1968) 103–109.
  12. Emina Požega, Slavko Bernik, Saša Marjanović, Ana Petrović, Igor Svrkota, Anđela Stojić, Danijela Simonović, Investigation of Bi2Te2.88Se0.12 Bulk Single Crystal Produced Using Bridgman Method, Science of Sintering, (2024) 56, 395- 403.
  13. B. M. Gol'cman, V. A. Kudinov, I. A. Smirnov, Semiconductor thermoelectricmaterials based onBi2Te3, Nauka, Moskva, 1972. (in Russian)
  14. O. B. Sokolov, S. Y. Skipidarov, N. I. Duvankov, G. G. Shabunina, Inorg. Mater.,43(1) (2005) 8.
  15. S. Bernik, M. Pribošek, in: “Proceedings of the 49th International conference on Microelectronics, Devices and Materials”Eds. M. Topič, Kranjska Gora, Slovenia: MIDEM, 2013, p. 121–126.

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