Prospects for the development of power electronics by application of technologies for production of power semiconductor switches based on silicon carbide

  • 1 Faculty of Mechanics and Energy, Ukrainian State University of Railway Transport, Ukraine


The article presents an analysis of the technical characteristics of promising technologies of power transistors based on silicon (Si) and silicon carbide (SiC). A comparative analysis of the energy characteristics of power diodes, MOSFETs and IGBT transistors of various classes based on these technologies is presented. An analysis of current-voltage characteristics and values of static and dynamic power losses in power switches is also given.



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