International Scientific Journals
of Scientific Technical Union of Mechanical Engineering "Industry 4.0"

Improvement of thermographic imaging device by using an automatic scanning system as opaque for infrared radiation of a matrix aperture with a window of transparency at the lens of the thermal imaging lens, leads to improvement of the spatial and temporal characteristics of the thermal imager, namely, its separation from the point of view. As a result of the experiments, it was found that the spatial resolution of the improved thermographic method (compared to the standard method of determination) was improved by 15 – 20%, and the spectral resolution by 0.3 – 0.5 μm. According to the results of the analysis of the processed image, the adjusted temperature scale of the thermogram, which, in turn, allowed to increase the accuracy of temperature determination in each accurate image (the temperature distribution error did not exceed 5.5%).

Without claiming to be exhaustive, this paper aims at analyzing the tools of alternative (Track II and III diplomacy) for conflict resolution and crisis management. In order to maximize the gains from private diplomacy, the EU should take into account what Track II and III diplomacy has done so far to help solve conflicts, why it is need and how it can best be used.

Electron beam lithography (EBL) is one of the few “top-down” methods and EBL is becoming increasingly widespread in R&D and small volume production due to its flexibility and mask-less nature, very high (sub-10 nm) resolution and accuracy and in many cases EBL is the only possible alternative. In this paper, obtained experimental and simulation results for EBL nano-patterning using the high-resolution electron beam resist Hydrogen Silsesquioxane (HSQ) are presented and discussed. The influence of EBL process parameters such as exposure dose, resist thickness and development process conditions on the obtained developed images is studied. The applied simulation tool for the resists’ characteristics evaluation is suitable for a precise control of obtained image dimensions in the resist applied as a masking layer for nano-patterning. This investigation and simulation of the characteristics of the studied e-beam resist aim to improve the resolution of the nano-dimensioned electron beam lithography and results for nano-lithography applications are also presented.