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Keyword: optoelectronic devices

  • MATHEMATICAL MODELLING OF TECHNOLOGICAL PROCESSES AND SYSTEMS

    Experimental and statistical models for determining the critical values of external action parameters on optical elements in extreme conditions of their operation

    • Iryna Yatsenko
    • Victor Antonyuk
    • Vyacheslav Vashchenko
    • Tatiana Butenko
    • Sergey Kolinko
    • Kateryna Semenchuk
    Mathematical Modeling, Vol. 6 (2022), Issue 2, pg(s) 55-58
    • Abstract
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    The study has been carried out and experimental and statistical models have been developed to determine the critical values of external extreme action parameters (intense heat flows, times of their action, increased external pressures) on optical elements made of glass and ceramics, the excess of which leads to their surface destruction (the appearance of cracks, chips and other defects) and, ultimately, to the failure of optoelectronic devices.

  • TECHNOLOGIES

    REGULARITIES OF INFLUENCE OF ELECTRON-BEAM TECHNOLOGY ON TECHNICAL AND OPERATIONAL CHARACTERISTICS OF OPTOELECTRONIC DEVICES

    • Yatsenko I. V.
    • Kyrychenko O. V.
    • Vashchenko V. A.
    • Sytnik A.A.
    • Dibrova O.S.
    Machines. Technologies. Materials., Vol. 13 (2019), Issue 12, pg(s) 546-549
    • Abstract
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    Based on the electron-beam technology we suggest the method that increases accuracy and extends the ranges of optoelectronic device measurement, and also increases the probability of their trouble-free operation under conditions of external thermal and mechanical actions. The method is based on the developed experimentally-statistical models to determine the complex influence of parameters of the electron beam on the physical-mechanical properties and optical characteristics in the surface layers of optical elements. at At the stage of device manufacturing this method allows forming a database of the superior physical and mechanical properties and the optical characteristics in the surface layers of optical elements depending on the electron beam parameters, by choosing the optimal regimes of their electron-beam processing, that allow maximizing the metrological characteristics of the devices.

  • DOMINANT TECHNOLOGIES IN “INDUSTRY 4.0”

    NEW APPLICATIONS OF NANOSTRUCTURED MATERIALS IN THE PROSPECT ELECTRONIC DEVICES

    • Smirnov Al. G.
    • Stsiapanau A. A.
    • Kazarkin B. A.
    • Belyaev V. V.
    • Chausov N.
    Industry 4.0, Vol. 2 (2017), Issue 6, pg(s) 272-274
    • Abstract
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    Nanostructured materials have unique properties which completely differ from the initial solid state condition. In this presentation we will discuss different techniques to fabricate such materials, their physical and optical parameters and characteristics, possible application areas. Main attention will be paid to aluminum and silicon nanostructured layers which are the promising alternatives of transparent semiconductors or metals as well as electroluminescent light emitting media.

  • IMPROVEMENT OF OPTICAL CHARACTERISTICS OF COMPONENTS OF OPTOELECTRONIC DEVICES IN THE HARSH CONDITIONS OF THEIR FUNCTIONING BY USING ELECTRON BEAM TECHNOLOGY

    • Yacenko I. V.
    • Antoniuk V. C.
    • Kyrychenko O. V.
    • Gordienko V. I.
    • Vashchenko V. A.
    Materials Science. Non-Equilibrium Phase Transformations., Vol. 3 (2017), Issue 2, pg(s) 42-48
    • Abstract
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    The optimal parameters of the ranges of the electron beam are found (heat density, velocity, displacement), within which there is improvement of the physical and mechanical properties of surface layers of optical elements: there is no formation of negative defects on their surfaces which become atomically smooth (residual microscopic ridges do not exceed 0.5… 1.5 nm); the microhardness of the surface increases, hardened layers are formed with compressive stresses. This leads to the reduction of the light scattering coefficient of surface layers of elements and increase of their coefficient of infrared radiation transmittance and, ultimately, to the improvement of metrological characteristics and reliability of devices under intensive external thermal action.

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