• DOMINANT TECHNOLOGIES IN “INDUSTRY 4.0”

    Surface Characterization of 2D Layers for Sensor Applications using SEM and 3D Laser Microscopy

    Industry 4.0, Vol. 10 (2025), Issue 5, pg(s) 174-177

    Two-dimensional (2D) materials such as graphene and tungsten disulfide (WS₂ ) are promising candidates for gas sensors due to their unique electrical and surface properties. Graphene exhibits high conductivity and mechanical strength, while its oxidized or functionalized forms enhance chemical reactivity and gas adsorption. WS₂ , a semiconducting transition metal dichalcogenide, shows strong surface interactions with gases, enabling sensitive detection even at room temperature.
    In this work, graphene and WS₂ thin films were characterized to evaluate surface morphology, uniformity, and structural quality. Graphene films were prepared by chemical vapor deposition (CVD) and transferred onto SiO₂ /Si substrates, while WS₂ films with thicknesses of 20 nm and 50 nm were obtained via CVD and sputtering. Surface analysis using scanning electron microscopy (SEM) and 3D laser microscopy revealed that graphene films are highly uniform and smooth, whereas WS₂ films exhibit thickness-dependent surface roughness and texture. These findings provide insights into the relationship between film morphology and gas sensing performance, highlighting the potential of both materials for sensor applications.

  • DOMINANT TECHNOLOGIES IN “INDUSTRY 4.0”

    2D semiconductive nanomaterials for sensor application

    Industry 4.0, Vol. 9 (2024), Issue 1, pg(s) 6-9

    This paper presents an investigation of innovative nanostructured semiconductive materials, focusing on dichalcogenides of transition metals, particularly WS2. The properties of WS2 in the context of its application in sensor technology and highlight the anticipated advantages of nanostructured disulfides compared to bulk semiconductor materials are discussed in the introduction. We propose a model sensor element based on the nanostructured disulfide WS2 and introduce a technological method utilizing electron beam lithography (EBL) for its preparation. The paper details the processes involved in preparing the resist masking layer using EBL, the metallization of the interdigital electrode (IDE) with contacts and important EBL characteristics such as a contrast curve, dependence of the linewidth on the exposure dose, and the line edge roughness.